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Proceedings Paper

Ellipsometry and Raman spectroscopy of MBE-grown undoped Si-Si0.78Ge0.22/(001)Si superlattices
Author(s): O. A. Mironov; Pepe Phillips; E. H. C. Parker; M. Mironov; V. P. Gnezdilov; V. Ushakov; Vicktor V. Eremenko
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Paper Abstract

Spectroscopic ellipsometry and Raman spectroscopy have ben sued to characterize Si/Si0.78Ge0.22 superlattices grown by molecular beam epitaxy at different substrate temperatures, 550 degrees C < Ts < 810 degrees C. The result are interpreted to give information on material and interface quality, layer thicknesses, and state of strain, and are in good agreement with XRD, SIMS and RBS investigations. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.

Paper Details

Date Published: 26 August 1997
PDF: 7 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280430
Show Author Affiliations
O. A. Mironov, Univ. of Warwick (United Kingdom)
Pepe Phillips, Univ. of Warwick (United Kingdom)
E. H. C. Parker, Univ. of Warwick (United Kingdom)
M. Mironov, Institute for Low Temperature Physics and Engineering (Ukraine)
V. P. Gnezdilov, Institute for Low Temperature Physics and Engineering (Ukraine)
V. Ushakov, Institute for Low Temperature Physics and Engineering (Ukraine)
Vicktor V. Eremenko, Institute for Low Temperature Physics and Engineering (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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