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Proceedings Paper

Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x~0.2 to 0.3) by EBIC method
Author(s): Jan Franc; Eduard Belas; Roman Grill; A. L. Toth; Helmut Sitter; Pavel Moravec; Pavel Hoeschl
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Paper Abstract

Diffusion lengths of minority electrons and holes in Hg1-xCdxTe single crystals produced by the diffusion controlled Bridgman growth from melt of constant composition were studied. Bulk p-HgCdTe samples were etched by low energy Ar ions in the VEECO ion etching system or in Ar plasma in a plasma etching reactor. As a result of this treatment a deep p-n junction was created in the samples. Secondary-electron and electron beam induced current images were used to determine the position of the p-n junction. The obtained EBIC data were then sued for evaluation of a set of minority carrier diffusion lengths at temperatures 140-270 K.

Paper Details

Date Published: 26 August 1997
PDF: 9 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280429
Show Author Affiliations
Jan Franc, Charles Univ. (Czech Republic)
Eduard Belas, Charles Univ. (Czech Republic)
Roman Grill, Charles Univ. (Czech Republic)
A. L. Toth, Research Institute for Technical Physics (Hungary)
Helmut Sitter, Johannes Kepler Univ. (Austria)
Pavel Moravec, Charles Univ. (Czech Republic)
Pavel Hoeschl, Charles Univ. (Czech Republic)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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