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Proceedings Paper

PbSnSe-on-Si: material and IR-device properties
Author(s): Hans Zogg; Alexander Fach; Joachim John; Peter Mueller; Carmine Paglino; A. N. Tiwari
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Paper Abstract

Progress in the development of narrow gap IV-VI-on-Si technology for IR sensor arrays is reviewed. Epitaxial Pb1-xSnxSe layers, about 4 micrometers thick, are grown by molecular beam epitaxy onto 3 inch Si(111) substrates. An intermediate CaF2 buffer layer of only 2 nm thickness was employed for compatibility reasons in most cases, direct growth without buffer layer, however, is possible. Material quality is improved by proper growth conditions and annealing. Threading dislocation densities as low as 106 cm-2 are obtained in samples with 3 X 3 cm2 size after proper anneal. It seems that glissile threading dislocations sweep out across the edge of the samples, and, in addition, such dislocations are able to react with sessile ones and transform them to glissile. IR photodiodes with much higher resistance area products can be obtained which approach the theoretical limit in a certain temperature range with such improve material quality. If the Pb/Pb1-xSnxSe IR Schottky-barrier sensors are described with a model which allows fluctuations of the barrier height, the saturation of the resistance-area products at low temperatures as well as ideality factors > 1 are explained as well.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280428
Show Author Affiliations
Hans Zogg, Swiss Federal Institute of Technology (Switzerland)
Alexander Fach, Swiss Federal Institute of Technology (Switzerland)
Joachim John, Swiss Federal Institute of Technology (Switzerland)
Peter Mueller, Swiss Federal Institute of Technology (Switzerland)
Carmine Paglino, Swiss Federal Institute of Technology (Switzerland)
A. N. Tiwari, Swiss Federal Institute of Technology (Switzerland)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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