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Proceedings Paper

Narrow-gap alloys (Pb,Sr)Se and (Pb,Eu)Se for optoelectronic devices
Author(s): Klaus H. Herrmann
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Paper Abstract

(Pb,Sr)Se and (Pb,Eu)Se are semiconductors with sodium chloride structure. They exhibit a direct energy gap which opens very sharply with increasing SeSe or EuSe content in the PbSe matrix. This is of interest for optoelectronic applications in photodetectors, injection lasers as well as for waveguides and cladding layers in quantum well and heterostructures in general. A detailed analysis of the optical, magnetooptical, photoelectric and photoluminescence properties of MBE-grown layers on BaF2 substrates with energy gaps up to 500 meV at temperatures between 10 K and 300 K is given. The discussion is concentrated on the following points: character of the near-to-edge optical transitions, influence of Coulomb interaction on the spectra; dispersion of the refractive index and the enhancement near Eg; differences between (Pb,Sr)Se and the dilute semimagnetic (Pb,Eu)Se; applications in optoelectronic devices.

Paper Details

Date Published: 26 August 1997
PDF: 12 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280427
Show Author Affiliations
Klaus H. Herrmann, Kuwait Univ. (Kuwait)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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