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Proceedings Paper

Photoconductivity of a semiconductor with transverse gradient of electric field
Author(s): Arthur Medvids
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Paper Abstract

The kinetics of photoconductivity and the spectral photosensitivity of a semiconductor with anisotropic electroconductivity in nonhomogeneous electric field has been investigated. Photoconductivity of germanium samples of ringlike geometry was studied experimentally and theoretically. The main results are: decay of the photocurrent in a semiconductor in the presence of the transverse gradient of electric field differs form the exponential one and depends on mutual directions of the gradient and the drift of the carriers; a photodetector with parameters reversibly controlled by electric and magnetic fields is possible. It was found that spectral photosensitivity is of either selective or bolometric type depending on mutual directions of incident light, the gradient of electric field, and of drift of carriers.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280426
Show Author Affiliations
Arthur Medvids, Riga Technical Univ. (Latvia)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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