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Proceedings Paper

Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures
Author(s): Alexander E. Belyaev; S. A. Vitusevich; Sergiy Mikhailovich Komirenko
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Paper Abstract

Epitaxial MnxHg1-xTe layers grown by the liquid phase method at temperatures 848K and 793K are investigated. Due to diffusion of Cd from substrate Cd0.96Zn0.04Te obtained layers are four-component. Results of conductivity and Hall measurements show that the graded-gap layer gives noticeable contribution to the transport characteristics.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280422
Show Author Affiliations
Alexander E. Belyaev, Institute of Semiconductor Physics (Ukraine)
S. A. Vitusevich, Institute of Semiconductor Physics (Ukraine)
Sergiy Mikhailovich Komirenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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