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Proceedings Paper

Tunnel surface recombination in optoelectronic device modeling
Author(s): Alexander A. Ptashchenko; Fedor A. Ptashchenko
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Paper Abstract

The rate of tunnel surface recombination (TSR) in a p-n structure has been calculated as a function of the excitation level and temperature in a semiclassical approximation under the assumption that the excess energy of a recombining electron is transferred to phonons or to a photon. The approximating analytical expressions obtained are applied in calculations of the effect of TSR on the characteristics of photodiodes, solar cells, light-emitting diodes and diode lasers.

Paper Details

Date Published: 26 August 1997
PDF: 5 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280420
Show Author Affiliations
Alexander A. Ptashchenko, Odessa Univ. (Ukraine)
Fedor A. Ptashchenko, Odessa Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics

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