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Proceedings Paper

Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy
Author(s): Balint Podor; D. Vignaud; I. M. Tiginyanu; L. Csontos; V. V. Ursaki; V. P. Shontya
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Paper Abstract

High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor concentration, and shifted the low temperature photoluminescence peaks toward higher energies. Room temperature Raman spectra were also studied. The Raman shift of the GaAs-like longitudinal optical phonon band increased with the Dy content in the growth melt. The results were explained by the effect of gettering of unintentional donor impurities in the melt by Dy, as well as by the effect of strain modification in the layers due to the possible incorporation of Dy.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280418
Show Author Affiliations
Balint Podor, Research Institute for Technical Physics (Hungary)
D. Vignaud, Univ. de Lille (France)
I. M. Tiginyanu, Institute of Applied Physics (Moldova)
L. Csontos, Research Institute for Technical Physics (Hungary)
V. V. Ursaki, Institute of Applied Physics (Moldova)
V. P. Shontya, Technical Univ. of Moldova (Moldova)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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