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Proceedings Paper

Photoelectric properties of Pb1-x-yGeySnxTe:In epitaxial films
Author(s): Vladimir F. Chishko; A. I. Dirotchka; Igor L. Kasatkin; Alexandre G. Moisseenko; V. V. Osipov; Evgenii I. Slyn'ko; Vyacheslav N. Vasil'kov
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Paper Abstract

Epitaxial films Pb1-x-yGeySnxTe:In grown by 'hot wall' method on insulating substrates BaF2 are studied. Samples are made in Ukrainian Institute of Problems of the Study of Materials. Measurements of photoconductivity spectra and temperature dependence of resistance are carried out at different background fluxes. The correlation between a cutoff wavelength and thermoactivation energies of resistance of studied samples was observed. The observed phenomena are explained on the basis of a two-electron Indium impurity center model. Energies of local oscillations of impurity centers are determined.

Paper Details

Date Published: 26 August 1997
PDF: 7 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280413
Show Author Affiliations
Vladimir F. Chishko, Orion (Russia)
A. I. Dirotchka, Orion (Russia)
Igor L. Kasatkin, Orion (Russia)
Alexandre G. Moisseenko, Moscow Institute of Physics and Technology (Russia)
V. V. Osipov, Orion (Russia)
Evgenii I. Slyn'ko, Ukrainian Institute of Problems of the Study of Materials (Russia)
Vyacheslav N. Vasil'kov, Orion (Russia)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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