Share Email Print

Proceedings Paper

Investigation of MIS-structures on MnxHg1-xTe
Author(s): O. G. Lanskaya; E. P. Lilenko; Aleksander V. Voitsekhovskii; V. I. Kalenik
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We inform on results C-V measurements of structures metal- insulator MnHgTe, in which interface insulator-MnHgTe is created anodic oxidation. Results of researchers of a structure of distribution of elements of a matrix on interface by a method Rutherford backscattering spectrometry are submitted. Interrelation between the characteristics of interface and C-V characteristics is shown. MIS-structures on MMT as with anodic oxide and with oxinitrid silicon deposition after removal anodic oxide. A nature of defects of a transient layer between oxide and MMT is discussed which requires further research. Passivation MMT by deposition SixOyNz allows to reach rather low concentration surface charge, that on the order is lower, than with anodic oxide.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280412
Show Author Affiliations
O. G. Lanskaya, Tomsk State Univ. (Russia)
E. P. Lilenko, Tomsk State Univ. (Russia)
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia)
V. I. Kalenik, Chernivtsi State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

© SPIE. Terms of Use
Back to Top