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Proceedings Paper

Correlation between crystal defects and properties of CdTe:Ge radiation detectors
Author(s): P. Feichuk; L. Shcherbak; D. Pluta; Pavel Moravec; Jan Franc; Eduard Belas; Pavel Hoschl
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Paper Abstract

High resistivity Ge-doped crystals with exact defined by radiometric analysis Ge contain were characterized by IR microscopy, dislocation etch techniques, scanning electron microscopy followed by detector performance features examination. the influence of several defect structure types on detector parameters were shown.

Paper Details

Date Published: 26 August 1997
PDF: 7 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280410
Show Author Affiliations
P. Feichuk, Univ. of Chernivtsi (Ukraine)
L. Shcherbak, Univ. of Chernivtsi (Ukraine)
D. Pluta, Univ. of Chernivtsi (Ukraine)
Pavel Moravec, Charles Univ. (Czech Republic)
Jan Franc, Charles Univ. (Czech Republic)
Eduard Belas, Charles Univ. (Czech Republic)
Pavel Hoschl, Charles Univ. (Czech Republic)


Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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