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Proceedings Paper

Blooming effects in indium antimode focal plane arrays
Author(s): I. Szafranek; O. Amir; Z. Calahora; A. Adin; D. Cohen
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Paper Abstract

Studies of blooming effects in InSb focal plane array (FPA) detectors, are presented. Two blooming test devices are described, which have allowed to isolate optical, charge- diffusion and electronic blooming mechanisms. It is demonstrated that when a spurious illumination due to optical scattering is eliminated, then no extended blooming occurs, and only normal cross-talk mechanisms cause signal offset in elements adjacent to the hot target image. Cross-talk data are analyzed in terms of the signal decay versus element position, and the lateral carrier diffusion length is derived. Susceptibility of different diode structures to blooming, is discussed. It is also shown that an FPA signal processor may cause an extensive electronic blooming.

Paper Details

Date Published: 13 August 1997
PDF: 7 pages
Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); doi: 10.1117/12.280383
Show Author Affiliations
I. Szafranek, Semiconductor Devices (Israel)
O. Amir, Semiconductor Devices (Israel)
Z. Calahora, Semiconductor Devices (Israel)
A. Adin, Semiconductor Devices (Israel)
D. Cohen, Semiconductor Devices (Israel)


Published in SPIE Proceedings Vol. 3061:
Infrared Technology and Applications XXIII
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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