Share Email Print
cover

Proceedings Paper

Improvement in HgCdTe diode characteristics by flip-chip bonded annealing
Author(s): Soo Ho Bae; Young-Ho Kim; Kwan Kim; Hee Chul Lee; Choong-Ki Kim
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report the results of annealing effect on the Hg0.78Cd0.22Te diodes fabricated by ion-implantation technique. The annealing was performed after flip-chip bonding with Si substrate. The performances of the diodes, before and after the annealing process, were investigated in detail by model fitting analyses. This model includes five current components, such as diffusion current, generation- recombination current, band to band tunneling current, trap- assisted tunnelling current, and photo current. Especially, in the view of a trap-assisted tunneling mechanism, newly developed model is proposed with the introduction of the Poole-Frenkel effect. Using this model, it is well explained that measured RoA product is much lower than their theoretical values in the ideally diffusion limited or generation- recombination limited cases. By flip-chip bonded annealing, RoA products of the diodes were increased and dark currents were decreased. From the model fitting, the improvements are explained by the change of carrier concentration profile in a p-n junction and the reduction of trap density by the annealing process.

Paper Details

Date Published: 13 August 1997
PDF: 7 pages
Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); doi: 10.1117/12.280327
Show Author Affiliations
Soo Ho Bae, Korea Advanced Institute of Science and Technology (South Korea)
Young-Ho Kim, Korea Advanced Institute of Science and Technology (South Korea)
Kwan Kim, Korea Advanced Institute of Science and Technology (South Korea)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)
Choong-Ki Kim, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3061:
Infrared Technology and Applications XXIII
Bjorn F. Andresen; Marija Strojnik, Editor(s)

© SPIE. Terms of Use
Back to Top