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Proceedings Paper

Suppression of reverse bias tunneling current in HgCdTe photodiodes formed by rapid thermal diffusion
Author(s): Seung-Man Park; Jae Mook Kim; Hee Chul Lee; Choong-Ki Kim
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Paper Abstract

In this paper, we report electrical and optical properties of the rapid thermal diffused (RTD) p-n junction photodiodes fabricated on LPE-grown p-type Hg0.70Cd0.30Te/CdZnTe substrate. In comparison with the ion implanted p-n junction on the same substrate, the reverse bias tunneling current is drastically suppressed in the RTD junction. The spectral photo-response of indium diffused HgCdTe photodiode shows the high quantum efficiency and the detectivity of 1.3 by 1011 cm/Hz1/2W. The suppression of the reverse bias leakage current, high quantum efficiency and low noise of the RTD photodiode could be explained by the suppression of the electrical active defects generation in the depletion region during the junction formation. The extracted carrier lifetime in the junction depletion region of the RTD HgCdTe photodiodes is larger than that of the ion-implanted one.

Paper Details

Date Published: 13 August 1997
PDF: 6 pages
Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); doi: 10.1117/12.280325
Show Author Affiliations
Seung-Man Park, Agency for Defense Development (South Korea)
Jae Mook Kim, Agency for Defense Development (South Korea)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)
Choong-Ki Kim, Korea Advanced Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 3061:
Infrared Technology and Applications XXIII
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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