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Proceedings Paper

Temperature-dependent hole and electron mobility of CMOS devices
Author(s): Wei-Lee Lu; Gwo-Chern Jiang; Kun-Fu Tseng; Ting-Hwan Chang; Zen-Wen Hwang; Luke Su Lu
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Paper Abstract

Temperature variable Hall measurement system has been setup to measurement both the carrier mobility and the carrier concentration for the CMOS devices. The measured Hall mobility show a little bit higher value than the conductance mobility. The measured carrier concentration at low gate bias region show a reverse trend as expected, and this may be due to the error in the estimation of the channel depth of the CMOS devices. In general, care has to be taken to the measurement procedure to ensure the accuracy of the Hall voltage.

Paper Details

Date Published: 13 August 1997
PDF: 7 pages
Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); doi: 10.1117/12.280316
Show Author Affiliations
Wei-Lee Lu, Chinese Naval Academy (Taiwan)
Gwo-Chern Jiang, Chinese Air Force Academy (Taiwan)
Kun-Fu Tseng, Chung Cheng Institute of Technology (Taiwan)
Ting-Hwan Chang, Chung Cheng Institute of Technology (Taiwan)
Zen-Wen Hwang, Chinese Naval Academy (Taiwan)
Luke Su Lu, Chung Cheng Institute of Technology (Taiwan)

Published in SPIE Proceedings Vol. 3061:
Infrared Technology and Applications XXIII
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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