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Proceedings Paper

New reflow process for indium bump
Author(s): Young-Ho Kim; Jong Hwa Choi; Kang-Sik Choi; Hee Chul Lee; Choong-Ki Kim
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Paper Abstract

A new reflow method for indium bump of hybridized HgCdTe IRFPA is proposed using H2 plasma. Twenty micrometer height indium bump is easily achieved with this method. In the new method, H2 plasma makes the indium bump surface clean with removing the oxidized indium by H radical chemical reaction. Simultaneously, H2 plasma increases the temperature of indium bump above 160 degrees Celsius. This sphere shaped bump is easily deformed plastically with relatively small force. Force of 2 g/bump changes the 20 micrometer height bump to 10 micrometer. The flip-chip bonding technique using the new reflow method is characterized with shear strain strength measurement. It is found that bonding reliability can be improved owing to increased height and smooth surface.

Paper Details

Date Published: 13 August 1997
PDF: 8 pages
Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); doi: 10.1117/12.280315
Show Author Affiliations
Young-Ho Kim, Korea Advanced Institute of Science and Technology (South Korea)
Jong Hwa Choi, Korea Advanced Institute of Science and Technology (South Korea)
Kang-Sik Choi, Korea Advanced Institute of Science and Technology (South Korea)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)
Choong-Ki Kim, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3061:
Infrared Technology and Applications XXIII
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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