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Proceedings Paper

Thermophysical properties of optical silicon
Author(s): William A. Goodman
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Paper Abstract

This paper presents an experimental database of the optical, electrical, physical, and structural properties for as-grown samples from large diameter silicon boules.1 Fourier Transform Infrared spectroscopy (FTIR) was utilized to evaluate the oxygen content and infrared absorbance in the HF laser bandwidth (2.6-3 microns). The bulk absorption coefficient over this bandwidth was quantified by performing laser absorption calorimetry. Electrical properties were obtained by performing Hall measurements at room temperature and 77 K, and the carrier concentration and impurity type were determined. The thermal conductivity was measured directly utilizing the Fourier technique, and the coefficient of thermal expansion was determined for room temperature to 600 °C via dilatometer measurements. Some of these procedures were repeated after the samples had been defect engineered, i.e., given a high temperature heat treatment, followed by a rapid quench.

Paper Details

Date Published: 28 July 1997
PDF: 24 pages
Proc. SPIE 10289, Advanced Materials for Optics and Precision Structures: A Critical Review, 1028905 (28 July 1997); doi: 10.1117/12.279815
Show Author Affiliations
William A. Goodman, W. J. Schafer Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 10289:
Advanced Materials for Optics and Precision Structures: A Critical Review
Mark A. Ealey; Roger A. Paquin; Thomas B. Parsonage, Editor(s)

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