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Proceedings Paper

Observation of quantum size effects in aluminum quantum wells on SiO2 and a-Si at 9.2 μm
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Paper Abstract

Optical properties of ultrathin aluminum quantum wells deposited on glass (SiO2) and crystalline silicon (a-Si) are studied at room temperature in the infrared region at 9.201 micrometers wavelength within two thicknesses range: d approximately 5 to 35 angstroms and 36 to 112 angstroms. All our thickness dependence reflectivity measurements were made by tuning a CO2 laser to 9.201 micrometers for p-polarization and an angle of incidence of 7 degree(s). Our main contribution here is the reveled fine oscillatory behavior on a gradually increasing reflectivity spectra. These fine oscillation structure can be attributed to quantum size effects.

Paper Details

Date Published: 1 October 1997
PDF: 6 pages
Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); doi: 10.1117/12.279113
Show Author Affiliations
Ricardo Villagomez-Tamez, Ctr. de Investigacion Cientifica y de Educaciion Superior en Ensenada (Mexico)
Ole Keller, Aalborg Univ. (Denmark)


Published in SPIE Proceedings Vol. 3133:
Optical Thin Films V: New Developments
Randolph L. Hall, Editor(s)

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