Share Email Print

Proceedings Paper

Observation of quantum size effects in aluminum quantum wells on SiO2 and a-Si at 9.2 um
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Optical properties of ultrathin aluminum quantum wells deposited on glass (SiO2) and crystalline silicon (a-Si) are studied at room temperature in the infrared region at 9.201 micrometers wavelength within two thicknesses range: d approximately 5 to 35 angstroms and 36 to 112 angstroms. All our thickness dependence reflectivity measurements were made by tuning a CO2 laser to 9.201 micrometers for p-polarization and an angle of incidence of 7 degree(s). Our main contribution here is the reveled fine oscillatory behavior on a gradually increasing reflectivity spectra. These fine oscillation structure can be attributed to quantum size effects.

Paper Details

Date Published: 1 October 1997
PDF: 6 pages
Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); doi: 10.1117/12.279113
Show Author Affiliations
Ricardo Villagomez-Tamez, Ctr. de Investigacion Cientifica y de Educaciion Superior en Ensenada (Mexico)
Ole Keller, Aalborg Univ. (Denmark)

Published in SPIE Proceedings Vol. 3133:
Optical Thin Films V: New Developments
Randolph L. Hall, Editor(s)

© SPIE. Terms of Use
Back to Top