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Proceedings Paper

Crystal growth and characterization of vanadium-doped and undoped CdSSe
Author(s): Kuo-Tong Chen; Ying-Fang Chen; Michelle Davis; Steven H. Morgan; Arnold Burger; Ching-Hua Su; Martin P. Volz; Sandor L. Lehoczky
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Paper Abstract

Undoped and doped CdS0.8 Se0.2 crystals were grown by physical vapor transport (PVT). The selected dopant was vanadium at a nominal concentration of 150 ppm creating for photorefractive effect. The as-grown crystal has a large crystal size, 1.1 cm in diameter and 6 cm in length, with a medium resistivity of 104 - 107 (Omega) -cm. The results from low temperature photoluminescence (PL) show that the undoped crystal has only one emission band at 2.31 eV and its phonon replicas. The vanadium doped crystal not only show the similar emission band but also has an additional broad band center at 1.95 eV due to the effect of doping. Low temperature (16 K) and room temperature IR transmittance spectra of vanadium doped crystal revealed a broad absorption band between 0.8 and 1.3 eV which may be due to vanadium dopant. Etch pitch density (EPD) measurements were performed, and the results showed EPD in the range of 104/cm2 for both types of crystals. Precipitate/inclusion were also found in both crystal, and their distribution patterns may be related to gravity-induced convection during growth process.

Paper Details

Date Published: 7 July 1997
PDF: 4 pages
Proc. SPIE 3123, Materials Research in Low Gravity, (7 July 1997); doi: 10.1117/12.277735
Show Author Affiliations
Kuo-Tong Chen, Fisk Univ. (United States)
Ying-Fang Chen, Fisk Univ. (United States)
Michelle Davis, Fisk Univ. (United States)
Steven H. Morgan, Fisk Univ. (United States)
Arnold Burger, Fisk Univ. (United States)
Ching-Hua Su, NASA Marshall Space Flight Ctr. (United States)
Martin P. Volz, NASA Marshall Space Flight Ctr. (United States)
Sandor L. Lehoczky, NASA Marshall Space Flight Ctr. (United States)

Published in SPIE Proceedings Vol. 3123:
Materials Research in Low Gravity
Narayanan Ramachandran, Editor(s)

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