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Proceedings Paper

Supercooling vs overheating in the III-V semiconductor compound InSb: an abrupt-discontinuous relationship
Author(s): David T. Hsu; Hua Yu Tong; Frank G. Shi
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Paper Abstract

The dependence of supercooling level ((Delta) T-) of InSb melt preceding on its melt overheating ((Delta) T+) above the equilibrium melting temperature, is investigated for the first time on a III-V semiconductor compound. The dependence of (Delta) T- on (Delta) T+ in the InSb melt is shown to be abrupt-and-discontinuous. The observation can be linked to the semiconductor-metal transition upon melting, and is probably general, occurring also for other III-V and group IV semiconductors.

Paper Details

Date Published: 7 July 1997
PDF: 4 pages
Proc. SPIE 3123, Materials Research in Low Gravity, (7 July 1997); doi: 10.1117/12.277710
Show Author Affiliations
David T. Hsu, Univ. of California/Irvine (United States)
Hua Yu Tong, Univ. of California/Irvine (United States)
Frank G. Shi, Univ. of California/Irvine (United States)


Published in SPIE Proceedings Vol. 3123:
Materials Research in Low Gravity
Narayanan Ramachandran, Editor(s)

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