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Optical characterization of the internal electric field distribution under bias of CdZnTe radiation detectors
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Paper Abstract

Polarized transmission optical profiles were used to characterize the CdZnTe (CZT) room-temperature radiation detectors. The internal electric field distributions of the CZT detectors under bias were probed by a 952 nm illumination between two crossed Glan-Taylor polarizers. A 16-bit digital charge coupled device (CCD) was employed as an image sensor. The 2-dimensional (2D) images reflecting the internal electrical field intensity changes were obtained utilizing the Pockels electro-optic effect. CZT detectors of crystal sizes of 5 by 5 by 5 mm were investigated under different bias voltages. Uniform and nonuniform internal electric field distributions throughout the detector volumes, under different light illumination conditions, were observed and analyzed. A theoretical model of the semiconductor energy band structure under the bias was established and used to understand the measurement results.

Paper Details

Date Published: 7 July 1997
PDF: 7 pages
Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); doi: 10.1117/12.277705
Show Author Affiliations
H. Walter Yao, Univ. of Nebraska/Lincoln (United States)
Richard J. M. Anderson, Sandia National Labs. (United States)
Ralph B. James, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3115:
Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications
Richard B. Hoover; F. Patrick Doty, Editor(s)

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