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Proceedings Paper

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance
Author(s): Valerica Cimpoca; Mariana Petris; Radu Ruscu; Madalina Breten; Rodica Moraru
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Paper Abstract

The paper describes some results concerning technology and behavior of x and gamma-ray N+PP+ silicon detectors used in physics research, industrial and medical radiography and non-destructive testing. These detectors work at the room-temperature and can be used individually to detect x- and soft gamma-rays, or coupled with scintillators for higher incoming energies. Electrical characteristics of these photodiodes, their modification after exposure to radiation and results of spectroscopic x- and gamma-ray measurements are discussed. Devices manufactured under this technology proved to be stable after an exposure in high intensity gamma field with the dose range of 10 krad - 5 Mrad. Nuclear radiation resistance was studied by irradiation with 60Co gamma source (1.17, 1.33 MeV) at dose rates of 59 krad/hour and 570 krad/hour. Results indicate that proposed structures enable the development of reliable silicon detectors to be used in high gamma-radiation environments encountered in a lot of applications.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); doi: 10.1117/12.277693
Show Author Affiliations
Valerica Cimpoca, National Institute for Materials Physics (Romania)
Mariana Petris, Institute of Physics and Nuclear Engineering (Romania)
Radu Ruscu, Institute of Physics and Nuclear Engineering (Romania)
Madalina Breten, National Institute for Materials Physics (Romania)
Rodica Moraru, Institute of Physics and Nuclear Engineering (Romania)


Published in SPIE Proceedings Vol. 3115:
Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications
Richard B. Hoover; F. Patrick Doty, Editor(s)

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