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Proceedings Paper

Development of the large-area silicon PIN diode with 2 millimeter-thick depletion layer for hard x-ray detector (HXD) on board ASTRO-E
Author(s): Mutsumi Sugizaki; S. Kubo; Toshio Murakami; Naomi Ota; Hideki Ozawa; Tadayuki Takahashi; Hidehiro Kaneda; Naoko Iyomoto; Tuneyoshi Kamae; Motohide Kokubun; Aya Kubota; Kazuo Makishima; Takayuki Tamura; Makoto Tashiro
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Paper Abstract

ASTRO-E is the next Japanese x-ray satellite to be launched in the year 2000. It carries three high-energy astrophysical experiments, including the hard x-ray detector (HXD) which is unique in covering the wide energy band from 10 keV to 700 keV with an extremely low background. The HXD is a compound-eye detector, employing 16 GSO/BGO well-type phoswich scintillation counters together with 64 silicon PIN detectors. The scintillation counters cover an energy range of 40 - 700 keV, while the PIN diodes fill the intermediate energy range from 10 keV to 70 keV with an energy resolution about 3 keV. In this paper, we report on the developments of the large area, thick silicon PIN diodes. In order to achieve a high quantum efficiency up to 70 keV with a high energy resolution, we utilize a double stack of silicon PIN diodes, each 20 by 20 mm2 in size and 2 mm thick. Signals from the two diodes are summed into a single output. Four of these stacks (or eight diodes) are placed inside the deep BGO active-shield well of a phoswich counter, to achieve an extremely low background environment. Thus, the HXD utilizes 64 stacked silicon PIN detectors, achieving a total geometrical collecting area of 256 cm2. We have developed the 2 mm thick silicon PIN diodes which have low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal. Through various trials in fabricating PIN diodes with different structures, we have found optimal design parameters, such as mask design of the surface p+ layer and the implantation process.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); doi: 10.1117/12.277691
Show Author Affiliations
Mutsumi Sugizaki, Institute of Space and Astronautical Science (Japan)
S. Kubo, Institute of Space and Astronautical Science (Japan)
Toshio Murakami, Institute of Space and Astronautical Science (Japan)
Naomi Ota, Institute of Space and Astronautical Science (Japan)
Hideki Ozawa, Institute of Space and Astronautical Science (Japan)
Tadayuki Takahashi, Institute of Space and Astronautical Science (Japan)
Hidehiro Kaneda, Univ. of Tokyo (Japan)
Naoko Iyomoto, Univ. of Tokyo (Japan)
Tuneyoshi Kamae, Univ. of Tokyo (Japan)
Motohide Kokubun, Univ. of Tokyo (Japan)
Aya Kubota, Univ. of Tokyo (Japan)
Kazuo Makishima, Univ. of Tokyo (Japan)
Takayuki Tamura, Univ. of Tokyo (Japan)
Makoto Tashiro, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 3115:
Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications
Richard B. Hoover; F. Patrick Doty, Editor(s)

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