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Proceedings Paper

Semiconductor material requirements for orthogonal strip detectors
Author(s): James C. Lund; H. Yoon; Nathan R. Hilton; Bruce Andrew Brunett; Ralph B. James
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Paper Abstract

We discuss the physical and electrical properties of semiconducting crystals necessary for use in orthogonal strip detectors. We also compute what constraints the properties of existing CdZnTe crystals place on the design of orthogonal strip detectors. First we consider the constraints imposed by uniform material that has limited charge carrier transport properties and resistivity. Next, we consider what effects spatially varying electrical properties (non-uniformities) have on the performance of detectors. Finally, we discuss the properties of CZT crystals available today that we have measured in our laboratory, and what ramifications these measured properties have on the design and construction of orthogonal strip detectors.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); doi: 10.1117/12.277685
Show Author Affiliations
James C. Lund, Sandia National Labs. (United States)
H. Yoon, Univ. of California/Los Angeles (United States)
Nathan R. Hilton, Univ. of Arizona (United States)
Bruce Andrew Brunett, Carnegie Mellon Univ. (United States)
Ralph B. James, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 3115:
Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications
Richard B. Hoover; F. Patrick Doty, Editor(s)

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