Share Email Print
cover

Proceedings Paper

Automated OPC for application in advanced lithography
Author(s): Kurt G. Ronse; Alexander V. Tritchkov; John Randall; Rik M. Jonckheere; Kouros Ghandehari; Luc Van den Hove
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Optical lithography is still the preferred technology for semiconductor volume production. The wavelength reduction cannot keep up with the pace of decreasing feature sizes. As a result, printing occurs closer and closer to the resolution limit of the projection tools, inducing severe proximity effects. In this paper, an overview of three automated optical proximity correction packages is given. Correction accuracy as well as mask making feasibility are touched upon. An attempt is made to predict the need for OPC in the optical lithography roadmap. It is expected that OPC will be needed to push the 248 nm lithography down to 0.18 micrometer, while it can then further be used to push 193 nm lithography down to 0.13 micrometer.

Paper Details

Date Published: 28 July 1997
PDF: 7 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277300
Show Author Affiliations
Kurt G. Ronse, Interuniv. Microelectronics Ctr. (Belgium)
Alexander V. Tritchkov, Interuniv. Microelectronics Ctr. (Belgium)
John Randall, Interuniv. Microelectronics Ctr. (Belgium)
Rik M. Jonckheere, Interuniv. Microelectronics Ctr. (Belgium)
Kouros Ghandehari, Interuniv. Microelectronics Ctr. (Belgium)
Luc Van den Hove, Interuniv. Microelectronics Ctr. (Belgium)


Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

© SPIE. Terms of Use
Back to Top