Share Email Print

Proceedings Paper

Development of an electron-beam optical column for the mask lithography system
Author(s): Tadashi Komagata; Yasutoshi Nakagawa; Hitoshi Takemura; Nobuo Gotoh
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Mask accuracies for the newest and next generation devices are very tight. The SIA Roadmap indicates writing accuracies (CD uniformity) of 18 nm and 13 nm for 1-Gbit and 4-Gbit DRAM 4X reticles, respectively. To meet this challenge, a new electron optical column is being developed for an electron beam mask writing system. The column has a beam current density of 20 A/cm2 (50 kV), a beam blurring of 0.06 micrometer at a 16 micrometer2 beam size, and a total aberration of less than 0.05 micrometer at 1 mm deflection length. The key technologies for this column are as follows: (1) Shorter column length and wider beam half-angle for reduction of Coulomb interaction; (2) Per shot focus correction of space charge effect; (3) In-lens, single stage electrostatic beam deflection system with focus and astigmatism correction. In this paper, we report the simulation results of this electron optical column design.

Paper Details

Date Published: 28 July 1997
PDF: 12 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277296
Show Author Affiliations
Tadashi Komagata, JEOL Ltd. (Japan)
Yasutoshi Nakagawa, JEOL Ltd. (Japan)
Hitoshi Takemura, JEOL Ltd. (Japan)
Nobuo Gotoh, JEOL Ltd. (Japan)

Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

© SPIE. Terms of Use
Back to Top