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Proceedings Paper

Focused-ion-beam (FIB) etching of quartz and carbon for Levenson mask repair
Author(s): Hiroko Nakamura; Haruki Komano; Iwao Higashikawa
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Paper Abstract

The etch-back and laser-explosion process was proposed and reported for Levenson mask repair before. If convex defects and leveling film were etched by physical sputtering and remaining leveling film was removed by laser explosion in the etch-back and laser-explosion process, quartz (Qz) substrate was over-etched because the Ga implanted layer of Qz substrate was also removed by the laser explosion due to the transmittance decrease of the Ga implanted layer. In this paper, gas assisted etching with the mixture of XeF2 and O2 was applied to the etch-back and laser-explosion process. The coincident etching rate of Qz (phase shifter) with C film was obtained, which is an indispensable requirement for the etch-back process. The optical transmittance of Qz substrate after the repair was 95% for the light of 250 nm wavelength. The transmittance was sufficient to avoid over-etching of Qz substrate.

Paper Details

Date Published: 28 July 1997
PDF: 5 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277284
Show Author Affiliations
Hiroko Nakamura, Toshiba Corp. (Japan)
Haruki Komano, Toshiba Corp. (Japan)
Iwao Higashikawa, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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