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Proceedings Paper

Proposal for pattern layout rule in application of alternating phase-shift mask
Author(s): Akihiro Nakae; Shuji Nakao; Yasuji Matsui
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Paper Abstract

An important pattern layout rule in application of alternating phase shift mask (PSM) is proposed. The images of semi- randomly aligned patterns show poor characteristics in defocus and mask fidelity. For an example, lines and spaces patterns with uniform bright and non-uniform dark widths showed significantly large CD variation with defocus. And lines and spaces patterns with uniform dark and non-uniform bright widths showed completely asymmetrical CD-focus characteristics. It has been revealed by the comparison between experimental data and the simulated results that the asymmetrical characteristics are caused by the spherical aberration in projection optics.

Paper Details

Date Published: 28 July 1997
PDF: 13 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277281
Show Author Affiliations
Akihiro Nakae, Mitsubishi Electric Corp. (Japan)
Shuji Nakao, Mitsubishi Electric Corp. (Japan)
Yasuji Matsui, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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