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Proceedings Paper

Zr-based films for attenuated phase-shift mask
Author(s): Tadashi Matsuo; Kinji Ohkubo; Takashi Haraguchi; Kohsuke Ueyama
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Paper Abstract

An aptitude for attenuated phase shift mask (AttPSM) blank of zirconium silicon oxide (ZrSiO) films for excimer laser lithography use was evaluated. ZrSiO films were deposited by dc or rf sputtering in Ar mixed with 02 gas using ZrSi2 target. Since optical constants of ZrSiO films vary with sputtering parameters, their bi-layer structures can fulfill optical quality required AttPSM. They have high durability to heating conc. H2SO4 independent of their optical constants. Internal stress varies from initial compression to tensile side by annealing to obtain conveniently a low stressed blank. Sheet resistance and surface roughness are sufficiently small to fabricate AttPSM pattern including sub- micron features. They are etched by chlorine-based gases, resulting in high dry etch selectivity to quartz substrate. Although they are expected to have potential in durability to excimer laser, it should be evaluated under the conditions similar to exposure system.

Paper Details

Date Published: 28 July 1997
PDF: 8 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277280
Show Author Affiliations
Tadashi Matsuo, Toppan Printing Co., Ltd. (Japan)
Kinji Ohkubo, Toppan Printing Co., Ltd. (Japan)
Takashi Haraguchi, Toppan Printing Co., Ltd. (Japan)
Kohsuke Ueyama, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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