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Proceedings Paper

Repairing Ta absorber x-ray masks with gas-assisted focused-ion-beam etching
Author(s): Ikuo Okada; Yasunao Saitoh; Makoto Hamashima; Misao Sekimoto; Tadahito Matsuda
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Paper Abstract

A process using gas-assisted etching (GAE) was developed to repair defects in x-ray masks with a high aspect ratio Ta pattern. XeF2 was employed as the etchant gas. To control the adhesion of XeF2 gas molecules on the surface of a sample, we adjusted the gap between the point of the nozzle and the sample surface. The sidewall of the pattern was vertical, and rounding at the pattern top was not seen. The linewidth of the pattern was in good agreement (within 0.02 micrometer) with the setting width. The pattern had a very smooth bottom due to the chemical effect of etching. In examining the printability by printing on a resist using the SR exposure system with a repaired mask, we confirmed that a Ta absorber x-ray mask could be repaired with high accuracy by GAE.

Paper Details

Date Published: 28 July 1997
PDF: 6 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277275
Show Author Affiliations
Ikuo Okada, NTT System Electronics Labs. (Japan)
Yasunao Saitoh, NTT Advanced Technology Corp. (Japan)
Makoto Hamashima, NTT Advanced Technology Corp. (Japan)
Misao Sekimoto, NTT System Electronics Labs. (Japan)
Tadahito Matsuda, NTT System Electronics Labs. (Japan)

Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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