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Proceedings Paper

Performance of cell-shift defect inspection technique
Author(s): Yasutaka Morikawa; Takashi Ogawa; Katsuhide Tsuchiya; Shigeru Noguchi; Katsuyoshi Nakashima
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Paper Abstract

Recently, as the design rule of device patterns has been tightened, it has been requested to improve reticle quality, furthermore, to supply reticles embedded resolution enhanced techniques in order to improve printability of most advanced device patterns on wafer. Typical examples are optical proximity correction pattern (OPC) feature like serif or jog decoration and opaque grating patterns and assist patterns of half-tone phase shift masks (HT-PSM). However, to guarantee (assure) the inspection of sub-micron pattern using common inspection techniques was difficult because of their algorithm restriction. We have developed the cell-to-cell comparison method, which we call the cell-shift inspection, to inspect sub-micron patterns with no false. We report the several applications and the evaluation results of cell-shift method in this paper.

Paper Details

Date Published: 28 July 1997
PDF: 11 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277265
Show Author Affiliations
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Takashi Ogawa, Dai Nippon Printing Co., Ltd. (Japan)
Katsuhide Tsuchiya, Dai Nippon Printing Co., Ltd. (Japan)
Shigeru Noguchi, Dai Nippon Printing Co., Ltd. (Japan)
Katsuyoshi Nakashima, Lasertec Corp. (Japan)


Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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