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Proceedings Paper

Stability of CrFx films for phase-shifting mask
Author(s): Eunah Kim; Seungbum Hong; Zhong-Tao Jiang; Sung-Chul Lim; Sang-Gyun Woo; Young-Bum Koh; Kwangsoo No
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Paper Abstract

Chromium fluoride film was thought to be a promising material as phase-shifting mask in deep-UV region. However, it degrades at humid condition. So we studied the degradation phenomena to propose a degradation mechanism of chromium fluoride films. We used several tools such as x-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS), to investigate how the composition and the chemical state change while the degradation proceeds. As a result, we could find that the degradation mechanism of chromium fluoride films can be described by multiple steps, which includes HF gas evolution, Cr-oxide precipitation, and crack propagation. This phenomena occurred all the range of the composition being applicable to the PSM at 193 nm, 248 nm, 365 nm and 436 nm. So it is required the development of other material or careful treatment of chromium fluoride for PSM applications.

Paper Details

Date Published: 28 July 1997
PDF: 4 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277261
Show Author Affiliations
Eunah Kim, Korea Advanced Institute of Science and Technology (South Korea)
Seungbum Hong, Korea Advanced Institute of Science and Technology (South Korea)
Zhong-Tao Jiang, Korea Advanced Institute of Science and Technology (South Korea)
Sung-Chul Lim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Young-Bum Koh, Samsung Electronics Co., Ltd. (South Korea)
Kwangsoo No, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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