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Proceedings Paper

Improving stress stability of Ta film for x-ray mask absorbers
Author(s): Masatoshi Oda; Miho Sakatani; Shingo Uchiyama; Tadahito Matsuda
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Paper Abstract

Stress in Ta films, which are excellent films for x-ray mask absorbers, gradually changes to compressive in air. The characteristics and a way to prevent the variation were investigated. The stress variation increases as pressure during Ta deposition is increased and decreases with increasing Ta thickness. These phenomena can be explained using a previously reported model of oxygen diffusion along the grain boundaries. The stress variation can be prevented by annealing in N2 atmosphere after deposition. A very short annealing is enough to stabilize even Ta film stress with large variation. The annealing causes the stress to shift to compressive, so it allows us to precisely control the stress. The annealing does not affect etching characteristics of the film.

Paper Details

Date Published: 28 July 1997
PDF: 6 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277258
Show Author Affiliations
Masatoshi Oda, NTT System Electronics Labs. (Japan)
Miho Sakatani, NTT Advanced Technology Corp. (Japan)
Shingo Uchiyama, NTT System Electronics Labs. (Japan)
Tadahito Matsuda, NTT System Electronics Labs. (Japan)


Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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