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Proceedings Paper

Modified low-temperture direct bonding method for vacuum microelectronics application
Author(s): Byeong-Kwon Ju; Duck-Jung Lee; Woo-Beom Choi; Yun-Hi Lee; Jin Jang; Kwang-Bae Lee; Myung-Hwan Oh
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Paper Abstract

This paper presents the process and experimental results for the improved silicon-to-glass bonding using silicon direct bonding (SDB) followed by anodic bonding. The initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon-glass ensemble using SDB method. Then the initially bonded specimen had to be strongly bonded by anodic bonding process. The effects of the bonding process parameters on the interface energy were investigated as functions of the bonding temperature and voltage. We found that the specimen which was bonded using SDB process followed by anodic bonding process had higher interface energy than one using anodic bonding process only. The main factor contributing to the higher interface energy in the glass-to-silicon assemble bonded by SDB followed by anodic bonding was investigated by secondary ion mass spectroscopy analysis.

Paper Details

Date Published: 19 June 1997
PDF: 7 pages
Proc. SPIE 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS, (19 June 1997); doi: 10.1117/12.276625
Show Author Affiliations
Byeong-Kwon Ju, Korea Institute of Science and Technology (South Korea)
Duck-Jung Lee, Korea Institute of Science and Technology (South Korea)
Woo-Beom Choi, Korea Institute of Science and Technology (South Korea)
Yun-Hi Lee, Korea Institute of Science and Technology (South Korea)
Jin Jang, Kyounghee Univ. (South Korea)
Kwang-Bae Lee, Sangji Univ. (South Korea)
Myung-Hwan Oh, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3046:
Smart Structures and Materials 1997: Smart Electronics and MEMS
Vijay K. Varadan; Paul J. McWhorter, Editor(s)

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