Share Email Print
cover

Proceedings Paper

Anodic bonding technique for silicon-to-ITO coated glass bonding
Author(s): Woo-Beom Choi; Byeong-Kwon Ju; Yun-Hi Lee; Myung-Hwan Oh; Man-Young Sung
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We performed silicon-to-In2O3:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In2O3:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy. In this work, silicon and In2O3:Sn coated glass with the deposited glass layer can be bonded at 190 degree(s)C with an applied voltage of 60VDC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy analysis were used to confirm the modeled bonding kinetics of silicon-to-In2O3:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display.

Paper Details

Date Published: 19 June 1997
PDF: 6 pages
Proc. SPIE 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS, (19 June 1997); doi: 10.1117/12.276624
Show Author Affiliations
Woo-Beom Choi, Korea Institute of Science and Technology (South Korea)
Byeong-Kwon Ju, Korea Institute of Science and Technology (South Korea)
Yun-Hi Lee, Korea Institute of Science and Technology (South Korea)
Myung-Hwan Oh, Korea Institute of Science and Technology (South Korea)
Man-Young Sung, Korea Univ. (South Korea)


Published in SPIE Proceedings Vol. 3046:
Smart Structures and Materials 1997: Smart Electronics and MEMS
Vijay K. Varadan; Paul J. McWhorter, Editor(s)

© SPIE. Terms of Use
Back to Top