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Proceedings Paper

Time-resolved spectroscopy of low-dimensional structures based on porous silicon
Author(s): Zbigniew Lukasiak; Waclaw Bala; Andrzej Kowalczyk; Elzbieta Nossarzewska-Orlowska
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Paper Abstract

Photoluminescence time resolved spectra (PL-TRS) and decay times measurements in microsecond range at room temperature on anodically etched boron-doped silicon are presented PL- TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. Decay curves of photoluminescence have a multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed model in which the multi-barrier structure is formed by silicon crystal surrounded by silicon quantum wires, oriented perpendicular to the sample surface with diameters in the range of 2 to 12 nm. The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.

Paper Details

Date Published: 13 June 1997
PDF: 6 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276247
Show Author Affiliations
Zbigniew Lukasiak, N. Copernicus Univ. (Poland)
Waclaw Bala, N. Copernicus Univ. (Poland)
Andrzej Kowalczyk, N. Copernicus Univ. (Poland)
Elzbieta Nossarzewska-Orlowska, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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