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Proceedings Paper

Effect of optical phonon confinement on Raman spectra of porous silicon
Author(s): J. Zuk; Miroslaw Kulik
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Paper Abstract

Raman scattering line shapes have been calculated for 2D and 3D phonon confinements in porous silicon. The anisotropy of the optical phonon propagation was taken into account for Si, by using realistic phonon dispersion curves obtained by neutron scattering. The theoretical Raman spectra have been compared to the experimental results, and the prevailing nanocrystalline shapes and characteristic dimensions of wire- or sphere-like Si nanocrystallites in porous silicon were estimated.

Paper Details

Date Published: 13 June 1997
PDF: 5 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276246
Show Author Affiliations
J. Zuk, Maria Curie-Sklodowska Univ. (Poland)
Miroslaw Kulik, Maria Curie-Sklodowska Univ. (Poland)

Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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