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Proceedings Paper

Determination of the trap depth by analysis of the thermoluminescence peak shape
Author(s): T. Lukas; A. Opanowicz
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Paper Abstract

The peak methods of Chen for the trap depth determination are applied to numerically calculated thermoluminescence curves of an insulator crystal. It turned out that the methods yield correct values of the trap depth except for the case of strong retrapping.

Paper Details

Date Published: 13 June 1997
PDF: 5 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276245
Show Author Affiliations
T. Lukas, Technical Univ. of Lodz (Poland)
A. Opanowicz, Technical Univ. of Lodz (Poland)

Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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