Share Email Print
cover

Proceedings Paper

Determination of recombination cross section for free electron in n-CuInS2
Author(s): D. Cybulski; A. Opanowicz
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The steady-state photoconductivity and photoconductivity decay have been measured from T equals 90 K to 310 K in n- CuInS2 crystals. At high light intensities the dependence of photoconductivity ((Delta) (sigma) ) on excitation strength (L) is expressed by the relation (Delta) (sigma) approximately L0.5. In this excitation strength range the decay of photoconductivity with time (t) can be described by the law (Delta) (sigma) (t) approximately (1 + Ct)-1, where the constant C is proportional to the cross-section (S) for recombination of photoexcited free electron. From the (Delta) (sigma) (t) dependence the value of the cross-section was determined. The cross-section depends on the temperature according to the relation S approximately T-1.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276243
Show Author Affiliations
D. Cybulski, Technical Univ. of Lodz (Poland)
A. Opanowicz, Technical Univ. of Lodz (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

© SPIE. Terms of Use
Back to Top