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Proceedings Paper

Photovoltaic effects from nano- and microstructured Si
Author(s): B. Unal; Sue C. Bayliss; P. J. Harris
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Paper Abstract

Photovoltaic effects from porous silicon (PS) based devices fabricated with electro-chemical etching processes have been investigated. Contact to the PS were made by bonding a small region of Al on a semi-transparent Au film. The structure of the uncoated porous layers were studied by SEM. Two levels of porosity were observed in n-type UV- and VIS-PS, surface etched features a few nanometers in diameter and macropores running deep in the bulk Si. Only nanopores were seen in p- type PS. The photovoltaic effects from the combination of the Au/porous Si junction and the PS/bulk Si heterojunction were observed under white-light of different intensity. The I-V characteristics of several PS based photovoltaic devices have been measured using a calibrated source. Photovoltages of the differently prepared n-type VIS-PS devices have been measured as a function of excitation energy. The polarities of photovoltage for both types of devices were found to be the same. P-type devices shows different I-V characteristics, depending on anodization current, all n- type PV devices present similar I-V characteristics.

Paper Details

Date Published: 13 June 1997
PDF: 8 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276239
Show Author Affiliations
B. Unal, De Montfort Univ. (United Kingdom)
Sue C. Bayliss, De Montfort Univ. (United Kingdom)
P. J. Harris, De Montfort Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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