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Proceedings Paper

InAsSb heterojunction photodiodes grown by liquid phase epitaxy
Author(s): Jaroslaw Rutkowski; Jolanta Raczynska; Antoni Rogalski; Krzysztof Adamiec; Waldemar Larkowski
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Paper Abstract

In this paper, the growth of p-n InAsSb/InSb heterojunction using liquid phase epitaxy (LPE) has been discussed. The layers have been grown on B InSb substrate using an In-rich solution in horizontal slider type boat. The active InAsSb layer was first grown with a desired composition. The carrier concentrations in the top layer in the range 1016 cm-3 to 1020 cm-3 was easily controlled using Cd doping. The standard structure consisted of 100 micrometers heavily doped n-type InSb substrate, an 10 micrometers InAsSb active region, and 2 micrometers heavily doped InSb p-type cap layer. Mirror like surface morphology was observed using a Nomarski differential interference contrast microscope. The structural characterization and the composition of InAsSb have been determined from x-ray diffraction data and IR transmission characteristic. The technology and construction of mesa photodiodes, both backside and frontside illuminated, have been presented. The analyses of the R0A product and current-voltage characteristics as a function of temperature shows that the dark currents of InSb/InSb photodiodes are diffusion limited. At higher As composition the R0A product is affected by the generation-recombination current of the depletion region.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276232
Show Author Affiliations
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Jolanta Raczynska, Military Univ. of Technology (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)
Waldemar Larkowski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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