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Proceedings Paper

HgCdTe focal plane arrays for high performance infrared cameras
Author(s): Lester J. Kozlowski
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Paper Abstract

Significant advances have been made in growing high quality HgCdTe detector arrays, designing and fabricating multiplexing readouts in submicron CMOS, and in subsequently fabricating large hybrid FPAs having excellent reliability. Consequently, high performance IR cameras are now being routinely developed for diverse applications. For example, FPAs as large as 1024 X 1024 with mean dark current < 0.1 e-/s, read noise < 0.1 e-/s and pixel yield as high as 99.85 percent for D > 1 X 1014 Jones are being supplied for IR astronomy. Affordable high performance IR imaging cameras, however, require cost-effective staring focal plane arrays (FPA) that operate at temperatures compatible with long-life, low-power coolers. We thus report a 5 micrometers 256 X 256 FPAs having mean D > 8.8 X 1011 cm-(root)Hz/W with > 99.5 percent pixel operability at 90K operating temperature. The device's large charge capacity enables full coverage of the 3 to 5 micrometers atmospheric window to provide many of the advantages promised by competing staring LWIR sensors including enhanced S/N under stringent operating conditions and reduced background clutter. The staring Hg1-xCdxTe FPAs offer not only high sensitivity, operability and reliability at elevated operating temperatures, but also stable, temporal noise-limited imaging over the 3.4 to 4.8 micrometers passband. We report temporal sensitivity < mK with comparable spatial noise at 95K operating temperature. We also quantify the operating temperature stability required to maintain high sensitivity. Finally, we briefly status our HgCdTe FPA technology by focusing on key off-the-shelf CMOS readouts.

Paper Details

Date Published: 13 June 1997
PDF: 12 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276226
Show Author Affiliations
Lester J. Kozlowski, Rockwell International Corp. (United States)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology

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