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X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures
Author(s): Peter Zaumseil; G. G. Fischer; Andrzej Misiuk
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Paper Abstract

The influence of hydrostatic pressure on the relaxation behavior of pseudomorphic Si1-xGex samples were treated under high hydrostatic pressures at room temperature as well as at high temperature (900 degrees C and 950 degrees C). Annealing under high pressure causes both a strong increase of relaxation and a strong enhancement of the Ge-Si-interdiffusion with increasing pressure relative to annealing experiments under atmospheric conditions. The activation volume of the Ge/Si interdiffusion process is estimated.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276220
Show Author Affiliations
Peter Zaumseil, Institute for Semiconductor Physics (Germany)
G. G. Fischer, Institute for Semiconductor Physics (Germany)
Andrzej Misiuk, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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