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Proceedings Paper

Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs
Author(s): B. Loncierz; Marian Nowak
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Paper Abstract

Recently reported contactless photoelectromagnetic (PEM) method of determining carrier lifetime was used for the first time to measure carrier lifetimes in variously doped GaAs:Te, GaAs:Si as well as in multiquantum well structure grown on GaAs substrate. This method uses the dependence of PEM magnetic flux evoked in AC illuminated sample on frequency of chopping of the illumination intensity. In the presented experiments the samples were illuminated with radiation of different intensities and wavelengths emitted by diode lasers. The simple inspection of semiconductor wafer for laboratory and industrial purposes.

Paper Details

Date Published: 13 June 1997
PDF: 7 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276215
Show Author Affiliations
B. Loncierz, Silesian Technical Univ. (Poland)
Marian Nowak, Silesian Technical Univ. (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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