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Proceedings Paper

Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBE
Author(s): Waclaw Bala; Grzegorz Glowacki; Adam Gapinski
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Paper Abstract

This works focuses on the study of optical properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on n-type (001) GaAs substrates. Luminescence, reflectivity and Raman spectroscopy are studied. Photoluminescence spectra of the samples are dominated by blue emission bands, which can be associated with radiative recombination of free excitons. The reflectivity spectra were used to investigate the refractive index value and the thickness of the layers. Moreover the temperature dependence of the band-gap energy of ZnxMg1-xSe epilayers was determined. Using Raman spectroscopy we can obtain information about two kinds of longitudinal optical phonon modes observed at room temperature, whose frequencies and intensities depend characteristically on Mg content.

Paper Details

Date Published: 13 June 1997
PDF: 6 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276213
Show Author Affiliations
Waclaw Bala, N. Copernicus Univ. (Poland)
Grzegorz Glowacki, N. Copernicus Univ. (Poland)
Adam Gapinski, N. Copernicus Univ. (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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