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Proceedings Paper

GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy
Author(s): G. Sek; Jan Misiewicz; Maria Kaniewska; Kazimierz Reginski; Jan Muszalski
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Paper Abstract

We have measured the photoreflectance (PR) spectra at room and liquid nitrogen temperatures of two MBE grown GaAs/AlGaAs structures. The first one is HEMT type system with buried 10 periods of 2.5 micrometers GaAs/2.5nm AlGaAs superlattice. Oscillations-like signal associated with this SL have been observed and detailed analyzed. The second investigated structure is the sequence of 10 different quantum wells. Transitions in almost all wells and those associated with above barrier states have been observed. The experimental transitions are well described in terms of envelope function model.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276212
Show Author Affiliations
G. Sek, Technical Univ. of Wroclaw (Poland)
Jan Misiewicz, Technical Univ. of Wroclaw (Poland)
Maria Kaniewska, Institute of Electron Technology (Poland)
Kazimierz Reginski, Institute of Electron Technology (Poland)
Jan Muszalski, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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