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Proceedings Paper

Photoreflectance and photoluminescence of InGaAs/GaAs structures
Author(s): Jan Misiewicz; Mariusz Ciorga; G. Sek; Leszek Bryja; D. Radziewicz; Ryszard Korbutowicz; Marek Panek; Marek J. Tlaczala
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Paper Abstract

InGaAs/GaAs quantum wells have been grown in MOCVD system equipped with horizontal Aixtron reactor. Photoreflectance spectra have shown, even at room temperature, sharp heavy and light holes excitonic transitions in quantum wells. The obtained splitting energies have been compared with values derived from theoretical considerations using envelope function model including lattice mismatch-related stress. Heavy and light holes transitions have been identified as excitonic transitions type I and type II, respectively. Photoluminescence measurements have been also done. For quantum wells, transitions between first heavy hole and first electron subbands have been observed. Additionally the temperature dependence of observed transitions have been performed.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276209
Show Author Affiliations
Jan Misiewicz, Technical Univ. of Wroclaw (Poland)
Mariusz Ciorga, Technical Univ. of Wroclaw (Poland)
G. Sek, Technical Univ. of Wroclaw (Poland)
Leszek Bryja, Technical Univ. of Wroclaw (Poland)
D. Radziewicz, Technical Univ. of Wroclaw (Poland)
Ryszard Korbutowicz, Technical Univ. of Wroclaw (Poland)
Marek Panek, Technical Univ. of Wroclaw (Poland)
Marek J. Tlaczala, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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