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Proceedings Paper

Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution
Author(s): Mariusz Ciorga; Leszek Bryja; Jan Misiewicz; Regina Paszkiewicz; Marek Panek; Bogdan Paszkiewicz; Marek J. Tlaczala
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Paper Abstract

Thick intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent were studied by photoluminescence at temperature T equals 2K. The dependence of photoluminescence spectra on contents of Bi in solution was analyzed.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276208
Show Author Affiliations
Mariusz Ciorga, Technical Univ. of Wroclaw (Poland)
Leszek Bryja, Technical Univ. of Wroclaw (Poland)
Jan Misiewicz, Technical Univ. of Wroclaw (Poland)
Regina Paszkiewicz, Technical Univ. of Wroclaw (Poland)
Marek Panek, Technical Univ. of Wroclaw (Poland)
Bogdan Paszkiewicz, Technical Univ. of Wroclaw (Poland)
Marek J. Tlaczala, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology

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