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Proceedings Paper

Photoreflectance spectroscopy for investigations of semiconductor structures
Author(s): Jan Misiewicz
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Paper Abstract

Photoreflectance spectroscopy as the nondestructive, contactless, room temperature method to investigate semiconductor layers, interfaces, structures and devices is presented. Principles of the method are described. Application to the investigations of the III-V and II-VI compounds structures, including quantum wells, heterojunction bipolar transistors, high electron mobility transistors, vertical cavity surface emitting lasers and quantum dots arrays are shown.

Paper Details

Date Published: 13 June 1997
PDF: 11 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276207
Show Author Affiliations
Jan Misiewicz, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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