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Proceedings Paper

Lithographic properties of perylenetetracarboxylic acid derivative films
Author(s): Victor Adamovich Azarko; E. V. Scharendo; Vladimir Enokovich Agabekov; V. E. Obuchov; Eduard I. Tochitsky
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Paper Abstract

Vacuum vapor deposited films of perylene-3,4,9,10- tetracarboxylic acid diimide derivatives (DPTA) permit to produce masks by laser vacuum projection lithography technique. The masks have submicron elements and plasma chemical etching (PCE) selectivity ranging from 7 to 15 during PCE of Si, SiO2 and Al. Ion-beam sputtering (IBS) selectivity of the DPTA masks during IBS of Cu, Al, GaAs, alloys CdxHg1-xTe and YBa2Cu3O7-x by Ar+ ions with the energy of 700 eV were changed from 1.2 to 23.3. The influence of chemical structure of the compounds investigated on film IBS rate was discussed.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276204
Show Author Affiliations
Victor Adamovich Azarko, Institute of Physical Organic Chemistry (Belarus)
E. V. Scharendo, Institute of Physical Organic Chemistry (Belarus)
Vladimir Enokovich Agabekov, Institute of Physical Organic Chemistry (Belarus)
V. E. Obuchov, Plasmoteg Engineering Ctr. (Belarus)
Eduard I. Tochitsky, Plasmoteg Engineering Ctr. (Belarus)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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